Calculating etch proximity-correction using object-precision...

Details Calculating etch proximity-correction using object-precision... Calculating etch proximity-correction using object-precision...

2007-06-19

2007-06-19

Garbowski, Leigh M. (Department: 2825)

Computer-aided design and analysis of circuits and semiconductor

Nanotechnology related integrated circuit design

C716S030000

Reexamination Certificate

active

10955532

ABSTRACT:
One embodiment of the present invention provides a system that calculates etch proximity-correction during an OPC (Optical Proximity Correction) process. During operation, the system receives a layout for an integrated circuit. Next, the system selects a target point on an edge in the layout. The system then creates a list of edges within an ambit of the target point. Next, the system removes edges from the list that are not visible from the target point. The system then computes a line integral of a statistical function over the remaining edges in the list, wherein the line integral of the statistical function models the etch proximity effects correlated with positions of the edges visible from the target point. Next, the calculated etch proximity-correction is applied to an area in proximity to the target point.

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