Calcium doped polysilicon gate electrodes

Details Calcium doped polysilicon gate electrodes Calcium doped polysilicon gate electrodes

2005-08-16

2005-08-16

Prenty, Mark V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S607000, C438S197000, C438S585000

Reexamination Certificate

active

06930362

ABSTRACT:
A calcium doped polysilicon gate electrodes for PMOS containing semiconductor devices. The calcium doped PMOS gate electrodes reduce migration of the boron dopant out of the gate electrode, through the gate dielectric and into the substrate thereby reducing the boron penetration problem increasingly encountered with smaller device size regimes and their thinner gate dielectrics. Calcium doping of the gate electrode may be achieved by a variety of techniques. It is further believed that the calcium doping may improve the boron dopant activation in the gate electrode, thereby further improving performance.

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patent: 6373113 (2002-04-01), Gardner et al.
patent: 2003/0168705 (2003-09-01), Tanida et al.
patent: 2004/0089887 (2004-05-01), Aronowitz et al.
patent: 2004/0110328 (2004-06-01), Aronowitz et al.
patent: 2004/0121550 (2004-06-01), Zubkov et al.

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