Cached synchronous DRAM architecture allowing concurrent DRAM op

Details Cached synchronous DRAM architecture allowing concurrent DRAM op Cached synchronous DRAM architecture allowing concurrent DRAM op

1996-10-18

1998-07-28

Chan, Eddie P.

Electrical computers and digital processing systems: memory

Storage accessing and control

Specific memory composition

711118, 711168, G06F 1208

Patent

active

057874573

ABSTRACT:
A cached synchronous dynamic random access memory (cached SDRAM) device having a multi-bank architecture includes a synchronous dynamic random access memory (SDRAM) bank including a row decoder coupled to a memory bank array for selecting a row of data in the memory bank array, sense amplifiers coupled to the memory bank array via bit lines for latching the row of data selected by the row decoder, and a synchronous column select means for selecting a desired column of the row of data. A randomly addressable row register stores a row of data latched by the sense amplifiers. A select logic gating means, disposed between the sense amplifiers and the row register, selectively gates the row of data present on the bit lines to the row register in accordance to particular synchronous memory operations of the cached SDRAM being performed. Data to be input into the cached SDRAM during a Write operation is received by the sense amplifiers and written into the memory bank array. Data to be output from the cached SDRAM during a Read command is read out only from the row register, the row of data contained in the row register first having been read from the memory bank array to the sense amplifiers and then selectively gated to the row register in accordance with the particular synchronous memory operations.

REFERENCES:
patent: 5184320 (1993-02-01), Dye
patent: 5588130 (1996-12-01), Fujishima et al.

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