Static information storage and retrieval – Read/write circuit – Differential sensing
Patent
1997-01-17
1998-09-01
Nelms, David C.
Static information storage and retrieval
Read/write circuit
Differential sensing
365210, 365222, G11C 702, G11C 700
Patent
active
058020020
ABSTRACT:
In a cache memory device including a DRAM cell array, a DRAM cell circuit is connected to word lines. A sense amplifier and a write amplifier are provided to the DRAM cell circuit for writing a certain data signal into one of memory cells connected to a selected word line. A read amplifier as well as the sense amplifier is provided to read data from one of the memory cells to generate a validity signal for showing whether data of the DRAM cell array is valid or invalid.
REFERENCES:
patent: 5421000 (1995-05-01), Fortino et al.
patent: 5577223 (1996-11-01), Tanoi et al.
Cortadella et al., "Dynamic RAM For On-Chip Instruction Caches", Computer Architecture News, vol. 16(4): 45-50, (1988), no month.
NEC Corporation
Nelms David C.
Phan Trong
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