C-BiCMOS semiconductor device

Details C-BiCMOS semiconductor device C-BiCMOS semiconductor device

1992-07-22

1994-06-07

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257370, 257378, 257552, H01L 2702

Patent

active

053192346

ABSTRACT:
There is disclosed a C-BiCMOS semiconductor device in which a base electrode (300) of an NPN bipolar transistor and a drain electrode (360) of a PMOS transistor are formed of the same polycrystalline semiconductor, in which a base electrode (310) of a PNP bipolar transistor and a drain electrode (350) of an NMOS transistor are formed of the same polycrystalline semiconductor, and in which a source electrode (530) of the PMOS transistor and a source electrode (520) of the NMOS transistor are formed of aluminium wiring. The C-BiCMOS semiconductor device achieves preferable electric conductivity in the source electrodes, size reduction in the drain electrodes, and simplified process steps in the formation of the base electrodes of the bipolar transistors, so that the size of the devices is reduced in simple process steps without deterioration of the electric conductivity.

REFERENCES:
patent: 4887142 (1989-12-01), Bertotti et al.
patent: 4902640 (1990-02-01), Sachitano et al.
patent: 5001073 (1991-03-01), Huie
patent: 5014106 (1991-05-01), Maeda et al.
patent: 5091760 (1992-02-01), Maeda et al.
patent: 5107321 (1992-04-01), Ilderem et al.
patent: 5119162 (1992-06-01), Todd et al.
patent: 5179036 (1993-01-01), Matsumoto
patent: 5231042 (1993-07-01), Ilderem et al.
patent: 5239270 (1993-08-01), Desbiens
Kobayashi et al., "High Performance LSI Technology: SST CBi-CMOS", IEDM, 1988, pp. 760-763.
Maeda et al., "Lower Submicron FCBiMOS (Fully Complementary BiMOS) Process with RTP and MeV Implanted 5 GHz Vertical PNP Transistor," IEEE 1990 Symposium on VLSI Technology, 1990, pp. 79-80.

Affiliated with

Also associated with

Rating

C-BiCMOS semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with C-BiCMOS semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and C-BiCMOS semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-794902