Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-01-02
2000-01-04
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257310, 257315, 257316, 257410, 257411, 365145, 365177, 36518526, H01L 29788
Patent
active
060112859
ABSTRACT:
The structure of a c-axis FEM cell semiconductor includes a silicon substrate; a source junction region and a drain junction region located in the substrate; a gate junction region located between the source junction region and the drain junction region; a FEM gate unit including a lower electrode, a c-axis oriented Pb.sub.5 Ge.sub.3 O.sub.11 FE layer and an upper electrode; wherein the FEM gate unit is sized on the gate junction region such that any edge of said FEM gate unit is a distance "D" from the edges of the source junction region and the drain junction region; an insulating layer, having an upper surface, overlying the junction regions, the FEM gate unit and the substrate; and source, drain and gate electrodes.
REFERENCES:
patent: 4262339 (1981-04-01), Geary
patent: 5070026 (1991-12-01), Greenwald et al.
patent: 5384294 (1995-01-01), Teowee et al.
patent: 5736759 (1998-04-01), Hanshalter
Peng et al., "Oriented Lead Germanate Thin Films by Excimer Laser Ablation", Appl. Phys. Lett. 60(7), Feb. 17, 1992, pp. 827-829.
Sinharoy et al., "Growth and the Microstructural and Ferroelectric Characterization of Oriented BaMgF.sub.4 Thin Films", IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, vol. 38, No. 6, Nov., 1991, pp. 663-667.
Nakao et al., "Study on Ferroelectric Thin Films for Application to NDRO Non-volatile Memories," Integrated Ferroelectrics, 1995, vol. 6, pp. 35-46.
Nakamura et al., "Preparation of Bi.sub.4 Ti.sub.3 O.sub.12 Films by MOCVD and Their Application to Memory Devices," Integrated Ferroelectrics, vol. 6, 1995, pp. 35-46.
Hsu Sheng Teng
Lee Jong Jan
Peng Chien Hsiung
Mintel William
Ripma David C.
Sharp Kabushiki Kaisha
Sharp Laboratories of America Inc.
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