Static information storage and retrieval – Read/write circuit – Bad bit
Reexamination Certificate
2006-01-10
2006-01-10
Phung, Anh (Department: 2824)
Static information storage and retrieval
Read/write circuit
Bad bit
C365S201000
Reexamination Certificate
active
06985392
ABSTRACT:
A memory includes byte aligned column redundancy capabilities for use in repairing the memory when a defective column is present. The memory array includes a repair/redundant column for use in repairing the memory when another column of the memory array is defective. The memory also has a redundant write multiplexer to select, when a defective column is present in the memory array, an input data bit to be written to the redundant column. A first input of the redundant write multiplexer may be coupled to receive either the LSB or the MSB of write data associated with the first column group and a second input of the redundant write multiplexer may be coupled to receive either the LSB or the MSB of write data associated with the second column group.
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Bateman Robert D.
Chalmers Kayla L.
Harness James R.
Intel Corporation
Phung Anh
Schwegman Lundberg Woessner & Kluth P.A.
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