Coating apparatus – Gas or vapor deposition – With treating means
Reexamination Certificate
2007-11-20
2007-11-20
Vinh, Lan (Department: 1765)
Coating apparatus
Gas or vapor deposition
With treating means
C118S7230VE, C438S706000, C438S714000, C156S345290
Reexamination Certificate
active
10323950
ABSTRACT:
A method and reactant gas bypass system for carrying out a plasma enhanced chemical vapor deposition (PECVD) process with improved gas flow stability to avoid unionized reactant precursors and thickness non-uniformities the method including providing a semiconductor process wafer having a process surface within a plasma reactor chamber for carrying out at least one plasma process; supplying at least one reactant gas flow at a selected flow rate to bypass the plasma reactor chamber for a period of time to achieve a pre-determined flow rate stability; and, redirecting the at least one reactant gas flow into the plasma reactor chamber to carry out the at least one plasma process.
REFERENCES:
patent: 6217658 (2001-04-01), Orczyk et al.
patent: 6268288 (2001-07-01), Hautala et al.
Cheng Yi-Lung
Liao Mo-Chen
Tsai Eric
Wang Ying-Lung
Wu Sze-Au
Taiwan Semiconductor Manufacturing Co. Ltd.
Tung & Associates
Vinh Lan
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