Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2005-12-27
2010-02-16
Dang, Trung (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S752000, C257S754000, C257SE29122, C257SE23145
Reexamination Certificate
active
07663237
ABSTRACT:
A semiconductor structure and a method of forming the same using replacement gate processes are provided. The semiconductor structure includes a butted contact coupling a source/drain region, or a silicide on the source/drain region, of a first transistor and a gate extension. The semiconductor structure further includes a contact pad over the source/drain region of the first transistor and electrically coupled to the source/drain region. The addition of the contact pad reduces the contact resistance and the possibility that an open circuit is formed between the butted contact and the source/drain region. The contact pad preferably has a top surface substantially leveled with a top surface of the gate extension.
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Chen Chloe Hsin-yi
Chen Wei-Ming
Lin Shyue-Shyh
Lwu David Hsu-Wei
Peng Yuan-Ching
Dang Trung
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
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