Electronic digital logic circuitry – Signal sensitivity or transmission integrity – Bus or line termination
Reexamination Certificate
1999-10-14
2001-10-02
Tokar, Michael (Department: 2819)
Electronic digital logic circuitry
Signal sensitivity or transmission integrity
Bus or line termination
C326S082000
Reexamination Certificate
active
06297663
ABSTRACT:
BACKGROUND OF THE INVENTION
The present invention relates to a bus system for signal transmission and a memory system using the same and more particularly, to a bus system having a bus for coupling a plurality of integrated circuits formed on a printed wiring board.
In recent years, higher performance has been desired in an information processing apparatus such as a personal computer. In order to realize the higher performance, not only performance of a processor for performing the operation process is required to be improved but also transfer throughput of a bus adapted to couple integrated circuits and LSI's (hereinafter referred to as modules) should be improved.
As measures to improve the throughput, either a method of widening the bit width of the bus or a method of increasing the operating frequency of the bus has been available. With a recent tendency toward miniaturization of apparatus, the former method is however difficult to materialize and in general, the latter method has been adopted. As a technique corresponding to the latter method, a low amplitude bus interface utilizing a low signal amplitude of about 1V, such as a GTL (Gunning Transistor Logic) disclosed in, for example, U.S Pat. No. 5,023,488, has been used widely.
In a conventional bus using a TTL (Transistor Transistor Logic), the operating frequency is limited to about 66 MHz but in the low amplitude bus interface such as the GTL, operation even at frequencies amounting up to 100 MHz or more can be permitted.
On the other hand, with the semiconductor fabrication techniques promoted, fineness of the semiconductor internal structure has been accelerated and the operating speed of semiconductors have been increasing. Accordingly, rise time and fall time of a signal are decreased and in signal transmission on the bus, distortion of a signal waveform tends to increase.
Measures to decrease the waveform distortion as above have been taken, including a method in which matching termination is effected at both ends of the bus based on the aforementioned GTL interface, a SSTL (Stub Series Terminated Logic) method disclosed in JP-A-8-286793 and a dumping resistor method applicable to the conventional TTL.
For example, the prior art low amplitude bus system is comprised of modules
100
,
110
and
120
and bus parts
201
to
204
, as shown in FIG.
6
. The modules
100
,
110
and
120
are respectively integrated circuits having GTL interfaces.
In the modules
100
,
110
and
120
, the individual interface circuits include input circuits in the form of comparators
101
,
111
and
121
, output circuits in the form of MOS transistors
103
,
113
and
123
, and capacitors
102
,
112
and
122
representative of equivalent capacitive components of the input circuits (here, comparators
101
,
111
and
121
).
Assumptively, in the prior art construction as above, each of the bus parts
201
to
204
has the same characteristic impedance Z
0
and terminating resistors
301
and
302
have each a resistance equal to the characteristic impedance Z
0
under the direction of matching termination which minimizes reflection from the bus end. The bus takes a wiring form of single stroke wiring starting with the terminating resistor
301
, going through the modules
100
,
110
and
120
and ending in the terminating resistor
302
.
As an example of operation of the bus system shown in
FIG. 6
, data transfer from module
100
to module
110
will be described. Voltage wave forms occurring at junction nodes V
1
, V
2
and V
3
on the bus in
FIG. 6
during the data transfer from module
100
to module
110
are simulated to obtain results as exemplified in FIG.
7
.
At time t
1
, voltage at the junction node V
1
of the module
100
becomes high level and a change of voltage from low level to high level propagates on the bus part
202
from the module
100
to the module
110
. Subsequently, at time t
2
, voltage at the junction node V
2
of the module
110
becomes high level.
At time t
3
following a propagation delay time of the bus part
203
, a change of voltage from low level to high level reaches the junction node V
3
of the module
120
. When the voltage change reaches the junction node V
3
at the time t
3
, part of the voltage change is reflected and returned by the capacitor
122
representative of the equivalent input capacitive component of the module
120
, producing a valley-like waveform distortion
901
in the voltage waveform at the node point V
2
at time t
4
(t
3
−t
2
=t
4
−t
3
).
As shown in
FIG. 6
, in the module
110
(modules
100
and
120
likewise), the input circuit in the form of the comparator
111
compares a threshold voltage Vth, which is a predetermined DC voltage, with the voltage at the junction node V
2
. Then, if the voltage at the junction node V
2
is higher than the threshold voltage Vth, data of “1” is recognized but if lower, data of “0” is recognized.
Pursuant to general characteristics of the comparator
111
, the voltage at the junction node V
2
of the module
110
cannot sometimes be recognized correctly in a range covering the close proximity to the threshold voltage Vth. This range is called a blind zone which is designated by
801
in FIG.
7
. Thus, even when the module
110
tries to fetch the voltage at the junction node V
2
near the time t
4
, a voltage Vp
1
associated with the waveform distortion
901
comes at the blind zone
801
and recognition of data “1” cannot always be warranted.
As described above, even in the matching termination bus such as the GTL interface, the waveform is distorted under the influence of the reflection by the capacitive component owned by the module and correct data transfer is sometimes prevented. This problem is raise by the steep rise time and fall time of output signals concomitant with the fineness of semiconductors and the promoted operating frequency of the bus and has not hitherto surfaced.
One method of solving the aforementioned problem is given by the SSTL interface disclosed in JP-A-8-286793. The SSTL interface, however, presupposes a push-pull type (low/high drive is effected by a pMOS transistor and an nMOS transistor) interface and cannot be applied to an open drain type (only the low side is driven by an nMOS transistor) interface which can be of wired OR connection. Another method of inserting a dumping resistor has hitherto been known and is applicable to the TTL interface. Essentially, however, this conventional method intends to control the output end impedance in unidirectional transmission and its application to the bidirectional bus is difficult to achieve.
SUMMARY OF THE INVENTION
Accordingly, the present invention contemplates solving the above problems and it is an object of the present invention to provide a technique which can decrease the influence of reflection from an equivalent input capacitive component of a module coupled to an open drain type bus to permit more high-speed and accurate signal transmission.
To accomplish the above object, according to one aspect of the present invention, a bus system comprises a bus constructed of a plurality of signal lines for transmission of signals, first and second terminating resistors connected to both ends of the respective signal lines, first, second and third modules coupled to the bus between the first and second terminating resistors and being each operative to deliver a signal through an open drain type output circuit, first series resistors inserted in the respective signal lines between the first and second modules, and second series resistors inserted in the respective signal lines between the second and third modules.
According to another aspect of the present invention, a memory system comprises a bus constructed of a plurality of signal lines for transmission of signals, first and second terminating resistors connected to both ends of the respective signal lines, a first memory buffer, a memory controller and a second memory buffer which are coupled to the bus between the two terminating resistors and are each operative to
Matsuoka Toshinobu
Seki Yukihiro
Suzuki Shin'ichi
Tobita Tsunehiro
Antonelli Terry Stout & Kraus LLP
Chang Daniel D.
Hitachi , Ltd.
Tokar Michael
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