Static information storage and retrieval – Read/write circuit
Patent
1993-05-06
1995-02-21
Nguyen, Viet Q.
Static information storage and retrieval
Read/write circuit
36518905, 36523001, 36523003, 36523008, 365233, G11C 700
Patent
active
053922395
ABSTRACT:
A dynamic random access memory (DRAM) circuit operates in burst mode when a row address strobe (RAS) signal is applied while an output enable/burst enable signal is also applied thereto. During burst mode, a column address strobe (CAS) signal is toggled to access digital data from sequential column addresses within a given row.
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Ishii Takatoshi
Margulis Neal D.
Fernandez Dennis S.
Hoang Huan
Nguyen Viet Q.
S3 Incorporated
Truong Phong K.
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