Static information storage and retrieval – Read/write circuit – Testing
Reexamination Certificate
2005-01-24
2008-08-12
Luu, Pho M. (Department: 2824)
Static information storage and retrieval
Read/write circuit
Testing
C365S230060, C365S226000, C365S227000
Reexamination Certificate
active
07411847
ABSTRACT:
The present invention relates to a system and method for applying a stress to a hierarchical memory structure in parallel, testing the memory structure for weak defects. The present invention includes writing a logic 0 into all the memory cells in a memory structure. All the high address predecoded lines and alternating predecoded lines for the lowest address are enabled. A voltage drop between neighboring wordlines and bitlines is affected. A logic I is written into all the memory cells in the memory structure. An opposite voltage polarity is caused on the bitlines due to the logic 1 in the memory cells. A reverse voltage polarity stress is achieved on the wordlines by flipping the state of the lowest predecoded line (i.e., by changing the input address corresponding to that line.
REFERENCES:
patent: 5610866 (1997-03-01), McClure
patent: 5629903 (1997-05-01), Agata
patent: 5657282 (1997-08-01), Lee
patent: 5822268 (1998-10-01), Kirihata
patent: 5852581 (1998-12-01), Beffa et al.
patent: 5995427 (1999-11-01), Tsukikawa
patent: 6205067 (2001-03-01), Tsukude
patent: 6275427 (2001-08-01), Aipperspach et al.
patent: 6327201 (2001-12-01), Dean
patent: 6327682 (2001-12-01), Chien et al.
patent: 6337820 (2002-01-01), Hatakeyama
patent: 6388946 (2002-05-01), McGibney et al.
patent: 6411557 (2002-06-01), Terzioglu et al.
patent: 6414888 (2002-07-01), Kitade et al.
patent: 6424554 (2002-07-01), Kawasumi
patent: 6570796 (2003-05-01), Sung
patent: 6643804 (2003-11-01), Aipperspach et al.
patent: 6909648 (2005-06-01), Terzioglu et al.
patent: 2001/0045570 (2001-11-01), Kitade et al.
Terzioglu Esin
Winograd Gil I.
Broadcom Corporation
Luu Pho M.
McAndrews Held & Malloy Ltd.
LandOfFree
Burn in system and method for improved memory reliability does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Burn in system and method for improved memory reliability, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Burn in system and method for improved memory reliability will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4015126