Burn-in methods for static random access memories and chips

Details Burn-in methods for static random access memories and chips Burn-in methods for static random access memories and chips

2011-03-29

2011-03-29

Yoha, Connie C (Department: 2827)

Static information storage and retrieval

Systems using particular element

Flip-flop

C365S189050, C365S201000

Reexamination Certificate

active

07916519

ABSTRACT:
A burn-in method for SRAMs and chips. For a memory cell of the SRAM, the SRAM burn-in method controls the control signals of the memory cell to generate current paths to pass through the memory cell, the corresponding bit-line and the corresponding bit-line-bar. The contacts/vias in the current paths are tested by providing burn-in currents to flow through the current paths, so that mismatched contacts/vias are burned by the burn-in currents. SRAMs that fail the burn-in test are abandoned after the burn-in procedure.

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