Buried trench capacitor

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

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Details

257296, 257532, 257304, 257305, 438242, H01L 2978, H01L 2904

Patent

active

061406740

ABSTRACT:
An integrated circuit and a method of making the same are provided. The circuit includes a substrate that has a trench formed therein defining and isolating first and second active area and an upper surface. The circuit includes a capacitor that has a first insulating layer formed in the trench, a conductor layer formed on the first insulating layer, and a second insulating layer formed on the first insulating layer that fills the trench. The conductor layer is positioned substantially at or below the upper surface. The circuit integrates trench isolation structure with a capacitor that may be used as a filter between power and ground. The method integrates capacitor formation with trench isolation formation.

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patent: 6020230 (2000-02-01), Wu
Stanley Wolf and Richard N. Tauber; Silicon Processing for the VLSI Era, vol. 2-Process Integration; pp. 56 and 587-609; 1990.

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