Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-10-02
2007-10-02
Wojciechowicz, Edward (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S301000, C257S332000, C257S333000, C257S347000, C257S401000
Reexamination Certificate
active
11085018
ABSTRACT:
A buried transistor particularly suitable for SOI technology, where the transistor is fabricated within a trench in a substrate and the resulting transistor incorporates completely isolated active areas. The resulting substrate has a decreased topography and there is no need for polysilicon (or other) plugs to connect to the transistor, unless desired. With this invention, better control is achieved in processing, particularly of gate length. The substrate having the buried transistor can be silicon oxide bonded to another substrate to form an SOI structure.
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Robert Richmond,Silicon-On-Insulator Technology, pp. 1-4; http://www.sysopt.com/articles/soi/index.html; accessed Apr. 10, 2002.
Kim Won-Joo
Skrovan John K.
Taylor Theodore M.
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