Buried transistors for silicon on insulator technology

Details Buried transistors for silicon on insulator technology Buried transistors for silicon on insulator technology

2005-05-31

2005-05-31

Wojciechowicz, Edward (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S328000, C257S331000, C257S335000

Reexamination Certificate

active

06900500

ABSTRACT:
A buried transistor particularly suitable for SOI technology, where the transistor is fabricated within a trench in a substrate and the resulting transistor incorporates completely isolated active areas. The resulting substrate has a decreased topography and there is no need for polysilicon (or other) plugs to connect to the transistor, unless desired. With this invention, better control is achieved in processing, particularly of gate length. The substrate having the buried transistor can be silicon oxide bonded to another substrate to form an SOI structure.

REFERENCES:
patent: 5736435 (1998-04-01), Venkatesan et al.
patent: 6010921 (2000-01-01), Soutome
patent: 6071803 (2000-06-01), Rutten et al.
patent: 6222210 (2001-04-01), Cerny et al.
patent: 6268629 (2001-07-01), Noguchi
patent: 2001/0053569 (2001-12-01), Skotnicki et al.
patent: 2002/0003260 (2002-01-01), Murakami
Robert Richmond,Silicon-On-Insulator Technology, pp. 1-4; http://www.sysopt.com/articles/soi/index/html; accessed Apr. 10, 2002.

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