Coherent light generators – Particular active media – Semiconductor
Patent
1996-06-28
1998-08-18
Bovernick, Rodney B.
Coherent light generators
Particular active media
Semiconductor
372 46, 372 50, 359344, 385 14, H01S 319, H01S 300, G02B 612
Patent
active
057967687
ABSTRACT:
A laser device or double buried heterostructure optical guide amplifier and a simple method for the integration of this device into any photonic circuit. The device has a buffer layer doped with carriers of a first type and covering the entire surface of a substrate doped with carriers of the same type, a first layer playing the role of an optical guide formed by a non-doped quaternary compound and covering the entire surface of the buffer layer, an extremely thin intermediate layer, highly doped with carriers of the first type and covering the entire surface of the guiding layer, one or more strips of active layer playing the role of lasers or amplifiers formed by a non-doped quaternary compound, and a sheathing layer doped with carriers of a second type. The device can be used in the field of integrated optics of optical telecommunications.
REFERENCES:
patent: 4953170 (1990-08-01), Logan et al.
Liou et al., "Monolithic Integrated InGaAsP/InP Distributed . . . Chemical Vapor Deposition", Applied Physics Letters, vol. 54, No. 2, pp. 114-116, Jan. 9, 1989.
Bouadma et al, "Over 245 mW 1.3 um Buried Ridge . . . Etching Technique", Applied Physics Letters, vol. 59, No. 1, pp. 22-24, Jul. 1, 1991.
Bruckner et al, "Taper-Waveguide Integration for Polarization . . . Optical Amplifiers", Electronics Letters, vol. 30, No. 16, pp. 1290-1291, Aug. 4, 1994.
Liou et al., Monolithic Integrated InGaAsP/InP Distributed . . . Chemical Vapor Deposition, Applied Physics Letters, Jan. 9, 1989, vol. 54, No. 2, 114-116.
H.J. Bruckner et al., Taper-Waveguide Integration for Polarisation . . . Optical Amplifiers, Electronics Lettters, Aug. 4, 1994, vol. 30, No. 16, pp. 1290-1291.
A. Kusakawa et al., Output Beam Characteristics . . . Circular Output Beam, Electronics Letters, Mar. 30, 1995, vol. 31, No. 7, p. 559.
N. Bouadma et al., Over 245 mW 1.3 .mu.m Buried Ridge . . . Etching Technique, Applied Physic Letters, Jul. 1, 1991, vol. 59, No. 1, pp. 22-24 .
Dorgeuille Fran.cedilla.ois
Mersali Boumedienne
Bovernick Rodney B.
France Telecom
Leung Quyen Phan
LandOfFree
Buried structure laser device for integrated photonic circuit an does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Buried structure laser device for integrated photonic circuit an, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Buried structure laser device for integrated photonic circuit an will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1122484