Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-08-05
1999-08-10
Abraham, Fetsum
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257324, 257342, 257343, 257358, 257363, 257382, 257384, 257396, 257459, H01L 2348
Patent
active
059362839
ABSTRACT:
According to the present invention, a MOSFET for an input/output protective circuit in which a source diffusion layer, a drain diffusion layer and a gate electrode are formed on a semiconductor substrate comprises a high melting point metal silicide layer disposed on the drain diffusion layer through a first insulating film, a metal wire layer disposed on the high melting point metal silicide layer through a second insulating film, at least two first contact holes for electrically connecting the high melting point metal silicide layer and the metal wire layer, and a second contact hole for electrically connecting the high melting point metal silicide layer and the drain diffusion layer, wherein the second contact hole is disposed at a substantial center between the two first contact holes.
REFERENCES:
patent: 5264729 (1993-11-01), Rostoker et al.
patent: 5338975 (1994-08-01), Cole, Jr. et al.
patent: 5631495 (1997-05-01), Dunn et al.
patent: 5689133 (1997-11-01), Li et al.
Fujii Takeo
Narita Kaoru
Abraham Fetsum
NEC Corporation
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