Buried silicide local interconnect with sidewall spacers and...

Details Buried silicide local interconnect with sidewall spacers and... Buried silicide local interconnect with sidewall spacers and...

2010-07-26

2011-11-01

Sarkar, Asok (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S621000, C257S740000, C257SE23019, C257SE23157

Reexamination Certificate

active

08049334

ABSTRACT:
A buried local interconnect and method of forming the same counterdopes a region of a doped substrate to form a counterdoped isolation region. A hardmask is formed and patterned on the doped substrate, with a recess being etched through the patterned hardmask into the counterdoped region. Dielectric spacers are formed on the sidewalls of the recess, with a portion of the bottom of the recess being exposed. A metal is then deposited in the recess and reacted to form silicide at the bottom of the recess. The recess is filled with fill material, which is polished. The hardmask is then removed to form a silicide buried local interconnect.

REFERENCES:
patent: 4962414 (1990-10-01), Liou et al.
patent: 5162259 (1992-11-01), Kolar et al.
patent: 6261908 (2001-07-01), Hause et al.
patent: 2004/0038517 (2004-02-01), Kang et al.
patent: 2005/0112831 (2005-05-01), Surdeanu

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