Buried-gated photodiode device and method for configuring...

Details Buried-gated photodiode device and method for configuring... Buried-gated photodiode device and method for configuring...

2006-04-27

2009-10-27

Loke, Steven (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S369000, C250S208100, C250S214100, C438S302000, C438S307000, C438S308000

Reexamination Certificate

active

07608873

ABSTRACT:
A 3-T buried-gated photodiode device that is suitable for use in a windowed array. The 3-T buried-gated photodiode device is configured such that the floating diffusion (FD) node of the device is held low when the device is not being specifically addressed, which ensures that the device cannot drive the corresponding pixel output line unless it is specifically addressed.

REFERENCES:
patent: 6107655 (2000-08-01), Guidash
patent: 6160281 (2000-12-01), Guidash
patent: 6352869 (2002-03-01), Guidash
patent: 6423994 (2002-07-01), Guidash
patent: 6552323 (2003-04-01), Guidash
patent: 6657665 (2003-12-01), Guidash
patent: 2004/0217426 (2004-11-01), Lee
patent: 2006/0138489 (2006-06-01), Ahn et al.
patent: 2006/0249653 (2006-11-01), Gazeley

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