Buried digit line stack and process for making same

Details Buried digit line stack and process for making same Buried digit line stack and process for making same

2005-01-04

2005-01-04

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S681000

Reexamination Certificate

active

06838375

ABSTRACT:
A process of making a buried digit line stack is disclosed. The process includes forming a silicon-lean metal silicide first film over a polysilicon plug, followed by a silicide compound barrier second film. The silicide compound barrier second film is covered with a refractory metal third film. A salicidation process causes the first film to salicide with the polysilicon plug. In one embodiment, all the aforementioned deposition processes are carried out by physical vapor deposition (“PVD”).

REFERENCES:
patent: 5392189 (1995-02-01), Fazan et al.
patent: 5717250 (1998-02-01), Schuele et al.
patent: 5770515 (1998-06-01), Meng et al.
patent: 5846881 (1998-12-01), Sandhu et al.
patent: 5892254 (1999-04-01), Park et al.
patent: 6017818 (2000-01-01), Lu
patent: 6057231 (2000-05-01), Givens et al.
patent: 6162671 (2000-12-01), Lee et al.
patent: 6174806 (2001-01-01), Thakur
patent: 6258719 (2001-07-01), Shah et al.
patent: 6455424 (2002-09-01), McTeer et al.
patent: 6482735 (2002-11-01), Givens et al.
patent: 6495471 (2002-12-01), Li et al.
patent: 6524952 (2003-02-01), Srinivas et al.
patent: 6531730 (2003-03-01), Sandhu et al.
patent: 6614116 (2003-09-01), Hu
patent: 6680246 (2004-01-01), Hu
patent: 20010001717 (2001-05-01), Kumauchi et al.
patent: 20010042920 (2001-11-01), Iwasaki et al.

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