Buried contact process

Details Buried contact process Buried contact process

1992-09-04

1994-07-05

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437186, 437191, H01L 21283

Patent

active

053267133

ABSTRACT:
A method of forming a buried contact to a source/drain junction or other active device region in a silicon substrate. A silicon oxide layer is formed over the silicon substrate. A first polysilicon layer is formed over the silicon oxide layer. A resist mask having an opening over the planned said buried contact is formed and the first polysilicon layer is isotropically etched to form a tapered opening to said underlying silicon oxide which opening undercuts the resist mask. The silicon oxide layer is anisotropically etched using the same resist mask which results in an opening to the silicon substrate corresponding to the resist pattern opening while leaving a silicon oxide border uncovered with the first polysilicon layer. A second polysilicon layer is deposited over the first polysilicon layer, the opening to the silicon substrate and the border of uncovered silicon oxide. The planned buried contact region is covered with a resist mask. Openings are formed to the planned source and drain regions wherein at least one of the source and drain regions is adjacent to the opening of the planned buried contact. The resist mask is removed. Ions are implanted through the second polysilicon layer in the opening to the silicon substrate to form the source and drain regions. The structure is heated to cause the formation of the buried region under the buried contact by outdiffusion from the buried contact layer.

REFERENCES:
patent: 3750268 (1973-08-01), Wang
patent: 5030584 (1991-07-01), Nakata
patent: 5049514 (1991-09-01), Mori
patent: 5214295 (1993-05-01), Manning

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