Buried contact method to release plasma-included charging damage

Details Buried contact method to release plasma-included charging damage Buried contact method to release plasma-included charging damage

1997-07-29

2000-07-25

Booth, Richard

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

438392, 438369, 438370, 438513, 438564, 438657, H01L 21331, H01L 2126, H01L 2122

Patent

active

060936266

ABSTRACT:
A method for eliminating plasma-induced charging damage during manufacture of an integrated circuit is described. A semiconductor substrate having a first conductivity type is provided. An oxide layer is formed on the semiconductor substrate. An opening is formed in the oxide layer. A polysilicon layer is formed over the oxide layer and in the opening. A diffusion region is formed in the semiconductor substrate, connected to the polysilicon layer through the opening, having a second conductivity type opposite to the first conductivity type, whereby a buried contact is formed. The buried contact is connected, through the substrate, to a ground reference. Further processing in a plasma environment is performed that would normally produce charging damage to the integrated circuit, but whereby the buried contact prevents the charging damage.

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Shone, et al., "Gate Oxide Charging and its Elimination for metal Capacitor and Transistor in VLSI CMOS Double Layer Metal Technology," Symposium on VLSI Technology, Jun. 1988, pp. 73-74.
S. Wolf, "Silicon Processing for the VLSI Era," vol. 2, Lattice Press, 1990, pp. 160-162.

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