Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-01-04
2005-01-04
Clark, S. V. (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S758000
Reexamination Certificate
active
06838728
ABSTRACT:
Semiconductor-based devices, and methods for making the devices, involve a first device that includes a buried channel layer, a dielectric layer, and a compositionally graded spacer layer. The spacer layer includes a first material and a second material, and is located between the buried channel layer and the dielectric layer. A second device includes a buried channel layer, a relaxed surface layer, and a spacer layer located between the buried channel layer and the relaxed surface layer. The spacer layer has a composition that is different from a composition of the relaxed layer. The spacer layer and the relaxed surface layer each have bandgap offsets relative to the buried channel layer to reduce a parasitic channel conduction. A substrate for fabrication of devices, and methods for making the substrate, involves a substrate that includes a first layer, such as a silicon wafer, a substantially uniform second layer, and a graded-composition third layer.
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Maiti et al., “Strained-Si Heterostructure Field Effect Transistors”Semiconductor Science and Technology, Institute of Physics, London, Nov. 1998, vol. 13, No. 11, pp. 1225-1246.
Fitzgerald Eugene A.
Lochtefeld Anthony J.
AmberWave Systems Corporation
Clark S. V.
Testa Hurwitz & Thibeault LLP
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