Buried channel charge coupled device

Details Buried channel charge coupled device Buried channel charge coupled device

1986-09-19

1987-09-15

Munson, Gene M.

Electrical pulse counters, pulse dividers, or shift registers: c

Charge transfer device

Compensating for or preventing signal charge deterioration

357 24, 357 30, G11C 1928, H01L 2978, H01L 2714, H01L 3100

Patent

active

046944761

ABSTRACT:
A buried channel CCD is described wherein buried CCD elements are formed on a semiconductor substrate of P-type material and formed in a semiconductor area of N-type material. Transfer electrodes are provided to which a driving pulse is applied. The driving pulse is a three-level pulse having, at different time points, first, second and third levels, during at least one part of a time period in a charge transfer period and a charge integration period, the first or second level of the three-level pulse is applied to selected transfer electrodes so that part of signal charges in the buried channel are drained through the semiconductor area into the semiconductor substrate; and in the charge transfer period, the second and third levels are alternately applied to the transfer electrodes.

REFERENCES:
patent: 3896485 (1975-07-01), Early
patent: 3996600 (1976-12-01), Patrin
patent: 4131810 (1978-12-01), Knaur et al.
patent: 4373167 (1983-02-01), Yamada
patent: 4467341 (1984-08-01), Suzuki
patent: 4527182 (1985-07-01), Ishihara et al.

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