Buried butted contact and method for fabricating

Details Buried butted contact and method for fabricating Buried butted contact and method for fabricating

1998-07-30

2000-11-28

Hardy, David

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

257372, H01L 2348

Patent

active

061539341

ABSTRACT:
A buried butted contact and method for its fabrication are provided which includes a substrate having dopants of a first conductivity type and having shallow trench isolation. Dopants of a second conductivity type are located in the bottom of an opening in said substrate. Ohmic contact is provided between the dopants in the substrate and the low diffusivity dopants that is located on a side wall of the opening. The contact is a metal silicide, metal and/or metal alloy.

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