Buried bit line-field isolation defined active semiconductor...

Details Buried bit line-field isolation defined active semiconductor... Buried bit line-field isolation defined active semiconductor...

2005-06-28

2005-06-28

Ngô, Ngân V. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S488000, C257S504000, C257S905000, C257S907000

Reexamination Certificate

active

06911687

ABSTRACT:
Active areas of a Dynamic Random Access Memory (DRAM) formed on a semiconductor substrate are defined by buried bit lines on two sides and by conductors separated from the semiconductor substrate by electrically insulating layers on two other sides. The conductors are electrically biased during operation of the DRAM to cause portions of the semiconductor substrate therebelow to increase in majority carrier concentration and thus to inhibit inversion thereof. Each buried bit line is formed in a trench in the semiconductor substrate. Each trench houses a separate bit line and is lined with an electrical insulator and has a conductor in a bottom portion thereof.

REFERENCES:
patent: 5410169 (1995-04-01), Yamamoto et al.
patent: 5793075 (1998-08-01), Alsmeier et al.
patent: 5892707 (1999-04-01), Noble
patent: 5977578 (1999-11-01), Tang
patent: 5981332 (1999-11-01), Mandelman et al.

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