Buried bit line DRAM cells and fabricating methods therefor

Details Buried bit line DRAM cells and fabricating methods therefor Buried bit line DRAM cells and fabricating methods therefor

1996-04-24

1997-12-30

Niebling, John

Fishing, trapping, and vermin destroying

427 60, 427203, H01L 2170

Patent

active

057029695

ABSTRACT:
A buried bit line DRAM cell includes an active region having a protruding tap, formed in a semiconductor substrate. A device isolation region is formed in the substrate, outside the active region. A bit line laterally contacts the tap and is buried in the device isolation region. Accordingly, photolithography steps for forming a device isolation film twice and for forming a bit line contact can be omitted, thereby obtaining process simplicity and wider process margins.

REFERENCES:
patent: 5348905 (1994-09-01), Kenney
patent: 5418176 (1995-05-01), Yang et al.
patent: 5420060 (1995-05-01), Gill et al.
patent: 5536670 (1996-07-01), Hsue
patent: 5618745 (1997-04-01), Kita

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