Buried biasing wells in FETS

Details Buried biasing wells in FETS Buried biasing wells in FETS

2007-09-18

2007-09-18

Vu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S394000

Reexamination Certificate

active

10711450

ABSTRACT:
A structure of a semiconductor device and method for fabricating the same is disclosed. The semiconductor structure comprises first and second source/drain regions; a channel region disposed between the first and second source/drain regions; a buried well region in physical contact with the channel region; and a buried barrier region being disposed between the buried well region and the first source/drain region and being disposed between the buried well region and the second source/drain region, wherein the buried barrier region is adapted for preventing current leakage and dopant diffusion between the buried well region and the first source/drain region and between the buried well region and the second source/drain region.

REFERENCES:
patent: 4824796 (1989-04-01), Chiu et al.
patent: 4862232 (1989-08-01), Lee
patent: 4885618 (1989-12-01), Schubert et al.
patent: 5290714 (1994-03-01), Onozawa
patent: 5362663 (1994-11-01), Bronner et al.
patent: 5548143 (1996-08-01), Lee
patent: 5789286 (1998-08-01), Subbanna
patent: 5932908 (1999-08-01), Noble
patent: 6001676 (1999-12-01), Sawada et al.
patent: 6074899 (2000-06-01), Voldman
patent: 6469355 (2002-10-01), Schneider et al.
patent: 6674672 (2004-01-01), Forbes et al.
patent: 2004/0046208 (2004-03-01), Dennard et al.

Affiliated with

Also associated with

Rating

Buried biasing wells in FETS does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Buried biasing wells in FETS, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Buried biasing wells in FETS will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3789535