Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-08-16
2005-08-16
Gurley, Lynne A. (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S613000, C438S614000, C438S615000
Reexamination Certificate
active
06930031
ABSTRACT:
A bumping process is disclosed. The bumping process comprises the steps of: providing a wafer having a plurality of bonding pads and a passivation layer, wherein the passivation layer exposes the bonding pads; forming an UBM layer over the wafer to cover the bonding pads; forming two or more photoresist layers over the wafer, wherein the photoresist layers have different exposure and development characteristics; forming at least one or more stair-shaped openings in the photoresist layers by a single exposure corresponding to the bonding pads; filling solder into the stair-shaped openings to form a plurality of solder bumps; removing the entire photoresist layer. The bumping process can provide bumps with higher heights, so that the connection between chips and carriers becomes more reliable.
REFERENCES:
patent: 6372622 (2002-04-01), Tan et al.
patent: 6486054 (2002-11-01), Fan et al.
patent: 6602775 (2003-08-01), Chen et al.
patent: 6649507 (2003-11-01), Chen et al.
Advanced Semiconductor Engineering Inc.
Gurley Lynne A.
Jiang Chyun IP Office
LandOfFree
Bumping process does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Bumping process, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Bumping process will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3498287