Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Bump leads
Reexamination Certificate
2007-09-18
2007-09-18
Sarkar, Asok Kumar (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Bump leads
C257S780000, C257SE23021, C257SE21508, C438S613000
Reexamination Certificate
active
11026919
ABSTRACT:
A bump structure of a semiconductor package and a method for fabricating the same are provided. The bump structure is used to connect a semiconductor element to a carrier of the semiconductor package. The fabrication method primarily employs an electroplating process to form the bump structure including an under bump metallurgy (UBM) layer, at least one I-shaped conductive pillar, and a solder material. This allows fine-pitch electrical connection pads to be arranged in the semiconductor package, and also provides an enhanced support structure and a sufficient height between the semiconductor element and the carrier.
REFERENCES:
patent: 2005/0121804 (2005-06-01), Kuo et al.
Hsiao Cheng-Hsu
Huang Chien-Ping
Lin Ying-Ren
Tsai Ho-Yi
Corless Peter F.
Edwards Angell Palmer & & Dodge LLP
Jensen Steven M.
Sarkar Asok Kumar
Siliconware Precision Industries Co. Ltd.
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