Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Bump leads
Reexamination Certificate
2008-03-25
2008-03-25
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Bump leads
C257S738000, C257S750000, C257S780000
Reexamination Certificate
active
11339774
ABSTRACT:
In connection with a bump of a semiconductor device and a manufacturing method thereof, a groove is formed in a bump pad region of a semiconductor substrate. An under bump metal layer is then formed in the groove, and a lower end portion of the bump fills the groove on the under bump metal layer.
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Jackson Jerome
Mills & Onello LLP
Samsung Electronics Co,. Ltd.
Valentine Jami M
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