Bump manufacturing method

Details Bump manufacturing method Bump manufacturing method

2006-01-24

2006-01-24

Zarabian, Amir (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S109000, C438S612000, C438S613000

Reexamination Certificate

active

06989326

ABSTRACT:
A method of forming bumps on the active surface of a silicon wafer. A first under-bump metallic layer is formed over the active surface of the wafer. A second under-bump metallic layer is formed over the first under-bump metallic layer. A portion of the second under-bump metallic layer is removed to expose the first under-bump metallic layer. A plurality of solder bumps is implanted onto the second under-bump metallic layer. The exposed first under-bump metallic layer is removed so that only the first under-bump metallic layer underneath the second under-bump metallic layer remains.

REFERENCES:
patent: 5162257 (1992-11-01), Yung
patent: 5462638 (1995-10-01), Datta et al.
patent: 5486282 (1996-01-01), Datta et al.
patent: 5508229 (1996-04-01), Baker
patent: 5937320 (1999-08-01), Andricacos et al.
patent: 6222279 (2001-04-01), Mis et al.
patent: 6417089 (2002-07-01), Kim et al.
patent: 6586322 (2003-07-01), Chiu et al.
patent: 2002/0173134 (2002-11-01), Viswanadam et al.

Affiliated with

Also associated with

Rating

Bump manufacturing method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Bump manufacturing method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Bump manufacturing method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3585066