Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-03-10
1999-11-09
Picardat, Kevin M.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438612, 2281805, H01L 2144
Patent
active
059813717
ABSTRACT:
In a ball forming method used in manufacturing semiconductor devices, a ball is formed at the end of a bonding wire, this ball is pressed against an electrode of a semiconductor device and bonded to the electrode, a capillary is raised by a predetermined amount, and an ultrasonic vibration is applied to the capillary so that a portion of the wire located between the bonded ball and the lower end of the capillary is caused to undergo resonant vibration. This resonant vibration separates the wire from the bonding ball, thus leaving the ball on the electrode as a bump.
REFERENCES:
patent: 5014111 (1991-05-01), Tsuda et al.
patent: 5124277 (1992-06-01), Tsumura
patent: 5176310 (1993-01-01), Akiyama et al.
patent: 5485949 (1996-01-01), Tomura et al.
patent: 5559054 (1996-09-01), Adamjee
patent: 5686353 (1997-11-01), Yagi et al.
patent: 5740956 (1998-04-01), Seo et al.
patent: 5857610 (1995-11-01), Hoshiba et al.
patent: 5894983 (1999-04-01), Beck et al.
patent: 5897049 (1999-04-01), Nakamura et al.
Kato Motohiko
Yamazaki Nobuto
Kabushiki Kaisha Shinkawa
Picardat Kevin M.
LandOfFree
Bump forming method does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Bump forming method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Bump forming method will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1455270