Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-11-22
2005-11-22
Nelms, David (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S611000, C438S108000
Reexamination Certificate
active
06967153
ABSTRACT:
A bump fabrication process for forming a bump over a wafer having a plurality of bonding pads thereon is provided. A patterned solder mask layer having a plurality of openings that exposes the respective bonding pads is formed over a wafer. The area of the opening in a the cross-sectional area through a the bottom-section as well as through a the top-section of the opening is smaller than the area of the opening in a the cross-sectional area through a the mid-section of the opening. Solder material is deposited into the opening and then a reflow process is conducted fusing the solder material together to form a spherical bump inside the opening. Finally, the solder mask layer is removed. In addition, a pre-formed bump may form on the bonding pad of the wafer prior to forming the patterned solder mask layer over the wafer having at least with an opening that exposes the pre-formed bump. Solder material is deposited into the openings and then a reflow process is conducted fusing the solder material and the pre-formed bump together to form a spherical bump. The pre-formed bump and the solder material may be fabricated using different constituents.
REFERENCES:
patent: 6492197 (2002-12-01), Rinne
patent: 2002/0137325 (2002-09-01), Shao
Chen Jau-Shoung
Chou Yu-Chen
Fang Jen-Kuang
Huang Min-Lung
Lee Chun-Chi
Advanced Semiconductor Engineering Inc.
Jiang Chyun IP office
Luu Chuong Anh
Nelms David
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