Bulk silicon voltage plane for SOI applications

Details Bulk silicon voltage plane for SOI applications Bulk silicon voltage plane for SOI applications

1997-01-10

1999-03-30

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257351, 257353, 257354, H01L 2701, H01L 2712, H01L 310392

Patent

active

058893067

ABSTRACT:
A semiconductor device including a conductive substrate, an insulator layer, a silicon layer doped with impurities and forming a first transistor and a second transistor, an isolation volume between said first transistor and said second transistor, and a conductive stud extending from the doped silicon layer to the substrate.

REFERENCES:
patent: 4478655 (1984-10-01), Nagakubo et al.
patent: 5145802 (1992-09-01), Tyson et al.
patent: 5286670 (1994-02-01), Kang et al.
patent: 5294821 (1994-03-01), Iwamatsu
patent: 5479048 (1995-12-01), Yallup et al.
patent: 5654573 (1997-08-01), Oashi et al.

Affiliated with

Also associated with

Rating

Bulk silicon voltage plane for SOI applications does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Bulk silicon voltage plane for SOI applications, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Bulk silicon voltage plane for SOI applications will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1217125