Buffered nondestructive-readout Josephson memory cell with three

Details Buffered nondestructive-readout Josephson memory cell with three Buffered nondestructive-readout Josephson memory cell with three

1991-06-13

1993-07-20

Hille, Rolf

Static information storage and retrieval

Systems using particular element

Superconductive

257 31, 307306, 307307, 364784, 364786, H01L 3922, G11C 1144, H03K 338, G06F 750

Patent

active

052299627

ABSTRACT:
A buffered nondestructive-readout Josephson memory cell comprises only three gates and is free of the half-select problem associated with Josephson memories, for both write and read operations. The basic memory cell unit comprises a first interferometer gate and an associated inductor defining a memory storage loop and a second interferometer gate that, together with a second inductor, defines a second loop in which a current pulse can be established only when a circulating current exists in the first loop. A third gate, responsive to a sense line and to the current pulse in the second loop, provides a voltage output which changes based upon whether a "1" or a "0" has been stored in the storage loop. For fabricating a bit-accessible memory, the third gate is further connected in closed circuit relationship with a third inductor which is magnetically coupled with the first gate.

REFERENCES:
patent: 4330841 (1982-05-01), Yamada et al.
patent: 4678945 (1987-07-01), Sugano et al.

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