Buffer circuit with wide gate input transistor

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

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Details

257206, H01L 2362

Patent

active

059145161

ABSTRACT:
In a semiconductor integrated circuit including an input-stage input buffer circuit, an input terminal of the input buffer circuit is connected to a gate of an input MOS transistor which has a gate length longer than a gate length specified in the applied design rule. Alternatively, in a gate array system of a semiconductor integrated circuit, a number of gates have a gate length longer than the length specified in an applied design rule. An input transistor of the input buffer circuit has gate with a gate length longer than a gate length specified in the applied design rule.

REFERENCES:
patent: 5367187 (1994-11-01), Yuen
patent: 5486716 (1996-01-01), Saito et al.

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