Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-04-30
1999-06-22
Hardy, David B.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257206, H01L 2362
Patent
active
059145161
ABSTRACT:
In a semiconductor integrated circuit including an input-stage input buffer circuit, an input terminal of the input buffer circuit is connected to a gate of an input MOS transistor which has a gate length longer than a gate length specified in the applied design rule. Alternatively, in a gate array system of a semiconductor integrated circuit, a number of gates have a gate length longer than the length specified in an applied design rule. An input transistor of the input buffer circuit has gate with a gate length longer than a gate length specified in the applied design rule.
REFERENCES:
patent: 5367187 (1994-11-01), Yuen
patent: 5486716 (1996-01-01), Saito et al.
Hardy David B.
Mitsubishi Denki & Kabushiki Kaisha
LandOfFree
Buffer circuit with wide gate input transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Buffer circuit with wide gate input transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Buffer circuit with wide gate input transistor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1709571