Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Patent
1996-04-29
1999-02-23
Nguyen, Nam
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
438710, 252 791, H01L 2100
Patent
active
058743626
ABSTRACT:
A process for etching single crystal silicon, polysilicon, silicide and polycide using iodinate or brominate gas chemistry, is disclosed. The iodinate/brominate gas chemistry etches narrow deep trenches with very high aspect ratios and good profile control and without black silicon formation or other undesirable phenomena.
REFERENCES:
patent: 3669774 (1972-06-01), Dismukes
patent: 3925120 (1975-12-01), Saida et al.
patent: 3994793 (1976-11-01), Harvilchuck et al.
patent: 4026742 (1977-05-01), Fujno
patent: 4141765 (1979-02-01), Druminski et al.
patent: 4184909 (1980-01-01), Chang et al.
patent: 4351696 (1982-09-01), Radigan
patent: 4374698 (1983-02-01), Sanders et al.
patent: 4422897 (1983-12-01), Horwitz
patent: 4431477 (1984-02-01), Zazac
patent: 4450042 (1984-05-01), Purdes
patent: 4473436 (1984-09-01), Beinvogl
patent: 4490209 (1984-12-01), Hartman
patent: 4492610 (1985-01-01), Okano et al.
patent: 4502915 (1985-03-01), Carter et al.
patent: 4505782 (1985-03-01), Jacob et al.
patent: 4581099 (1986-04-01), Fukaya et al.
patent: 4613400 (1986-09-01), Tam et al.
patent: 4623417 (1986-11-01), Spencer et al.
patent: 4631106 (1986-12-01), Nakazato et al.
patent: 4632719 (1986-12-01), Chow et al.
patent: 4648936 (1987-03-01), Ashby et al.
patent: 4648938 (1987-03-01), Ashby et al.
patent: 4657628 (1987-04-01), Holloway et al.
patent: 4668338 (1987-05-01), Maydan et al.
patent: 4668365 (1987-05-01), Foster et al.
patent: 4689871 (1987-09-01), Mahli
patent: 4690729 (1987-09-01), Douglas
patent: 4698900 (1987-10-01), Esquivel
Hirobe et al, "Reduction of Radiation Damage on Silicon Substrates in Magnetron Reactive Ion Etching," Journal of hte Electrochemical Society, vol. 132, No. 4, pp. 938-942, Apr. 1985.
Miyamura et al, "Adsorption of HC1 and HBr on Si (111): AES, ELS, and EID Studies,", Surface Science, vol. 72, pp. 243-252, 1978.
Shiable et al. "Reactive Ion Etching of Aluminum and Aluminum Alloys in an RF Plasma Containing Halogen Species," J. Vac. Sci. Technol., vol. 15, No .2, pp. 334-337, Mar./Apr. 1978.
Flamm et al. "Etching and Film Formation in CF.sub.3 Br Plasma: Some Qualitative Observations and Their General Implications," J. Vac. Sci. Technol., vol. 17, No. 6, pp. 1341-1347, Nov./Dec. 1980.
Kern, "Chemical Etching of Silicon, Germanium, Gallium Arsenide, and Gallium Phosphide, " RCA Review, vol. 39, pp. 278, 293-308, Jun. 1978.
Gregor et al, "Vapor-Phase Polishing of Silicon with H.sub.2 --HBr Gas Mixtures, "IBM Journal, pp. 327-332, Jul. 1965.
Matsuo, "Selective Etching of Si Relative to SiO.sub.2 without undercutting by CBrF.sub.3 Plasma," Appl. Phys. Lett.. vol. 36, No. 9, pp. 768-770, May, 1980.
Tachi et al, "Chemical Sputtering of Silicon by F.sup.+, C1.sup.+, and B.sup.+ Ions: Reactive Spot Model for Reactive Ion Etching," J. Vac. Sci. Technol. B, vol. 4, No. 2, pp. 459-467, Mar./Apr. 1986.
Chang Mei
Mak Alfred W. S.
Maydan Dan
Wang David Nin-Kou
Wong Jerry Yuen-Kui
Applied Materials Inc.
Morris Birgit E.
Nguyen Nam
Ver Steeg Steven H.
Wilson James C.
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