Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2006-02-28
2006-02-28
Quach, T. N. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S022000, C257S103000
Reexamination Certificate
active
07005667
ABSTRACT:
A broad-spectrum Al(1-x-y)InyGaxN light emitting diode (LED), including: a substrate, a buffer layer, an N-type cladding layer, at least one quantum dot emitting layer, and a P-type cladding layer. The buffer layer is disposed over the substrate. The N-type cladding layer is disposed over the buffer layer to supply electrons. The quantum dot emitting layer is disposed over the N-type cladding layer and includes plural quantum dots. The dimensions and indium content of the quantum dots are manipulated to result in uneven distribution of character distribution of the quantum dots so as to increase the FWHM of the emission wavelength of the quantum dot emitting layer. The P-type cladding layer is disposed over the quantum dot emitting layer to supply holes. A broad-spectrum Al(1-x-y)InyGaxN yellow LED may thus be made from the LED structure of this invention, with an emission wavelength at maximum luminous intensity falling within a range of 530˜600 nm, and FWHM within a range of 20˜150 nm. After packaging an Al(1-x-y)InyGaxN blue LED to form a solid state white light emitting device, the mixing of blue light and yellow light would generate white light with a high CRI index, high luminous intensity and capable of various color temperature modulation.
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Chen Cheng Chuan
Chen Ming Chang
Christensen O'Connor Johnson & Kindness PLLC
Genesis Photonics Inc.
Quach T. N.
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