Bridged gate FinFet

Details Bridged gate FinFet Bridged gate FinFet

2007-11-01

2010-06-22

Lee, Calvin (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S399000

Reexamination Certificate

active

07741672

ABSTRACT:
In a fin-type field effect transistor (FinFET) structure, a gate strap is positioned on the top of a gate conductor and runs along the gate conductor. The top of the gate strap is positioned a greater height above the top surface of the substrate than the top of the fin cap. The gate strap is conformal and, therefore, the top of the portion of the gate strap that crosses the fin cap has a greater height above the top surface of the substrate than top portions of other regions of the gate strap. Further, the material of the gate strap can have a different work function than a material of the gate conductor.

REFERENCES:
patent: 6432829 (2002-08-01), Muller et al.
patent: 7288805 (2007-10-01), Anderson et al.
patent: 2009/0101978 (2009-04-01), Anderson et al.

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