Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2006-01-10
2006-01-10
Le, Thong Q. (Department: 2827)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
Reexamination Certificate
active
06985382
ABSTRACT:
A technique to read a stored state in a magnetoresistive random access memory (MRAM) device, such as a giant magneto-resistance (GMR) MRAM device or a tunneling magneto-resistance (TMR) device uses a bit line in an MRAM device that is segmented into a first portion and a second portion. An interface circuit compares the resistance of a first portion and a second portion of a first bit line to the resistance of a first portion and a second portion of a second bit line to determine the logical state of a cell in the first bit line. The interface circuit includes a reset circuit that selectively couples the outputs of the interface circuit together. A subsequent decoupling of the outputs allows cross-coupling within the interface circuit to latch the outputs to a logical state corresponding to the stored magnetic state, thereby allowing the stored state of a cell to be read.
REFERENCES:
patent: 3573485 (1971-04-01), Ballard
patent: 4132904 (1979-01-01), Harai
patent: 4470873 (1984-09-01), Nakamura
patent: 4751677 (1988-06-01), Daughton et al.
patent: 4887236 (1989-12-01), Schloemann
patent: 5595830 (1997-01-01), Daughton
patent: 5640343 (1997-06-01), Gallagher et al.
patent: 5650887 (1997-07-01), Dovek et al.
patent: 5650958 (1997-07-01), Gallagher et al.
patent: 5654566 (1997-08-01), Johnson
patent: 5695864 (1997-12-01), Slonczewski
patent: 5701222 (1997-12-01), Gill et al.
patent: 5701223 (1997-12-01), Fontana, Jr. et al.
patent: 5861328 (1999-01-01), Tehrani et al.
patent: 5920500 (1999-07-01), Tehrani et al.
patent: 6147922 (2000-11-01), Hurst, Jr. et al.
patent: 6175525 (2001-01-01), Fulkerson et al.
patent: 6269027 (2001-07-01), Hurst et al.
patent: 6317359 (2001-11-01), Black et al.
patent: 6343032 (2002-01-01), Black et al.
patent: 6392924 (2002-05-01), Liu et al.
patent: 6493259 (2002-12-01), Swanson et al.
patent: 6515895 (2003-02-01), Naji
patent: 6542000 (2003-04-01), Black et al.
patent: 6693826 (2004-02-01), Black, Jr. et al.
patent: 6714441 (2004-03-01), Fulkerson et al.
patent: 6724654 (2004-04-01), Swanson et al.
patent: 6865106 (2005-03-01), Fulkerson et al.
patent: 2002/0064067 (2002-05-01), Inui
patent: 0293231 (1988-11-01), None
patent: 0776011 (1997-05-01), None
patent: 1326255 (2003-07-01), None
patent: 1326255 (2004-06-01), None
patent: WO9820496 (1998-05-01), None
patent: WO9953499 (1999-10-01), None
Daughton, James M., “Advanced MRAM Concepts” Feb. 7, 2001NVE Cooperationretrieved from the Internet: <URL: www.nve.com/otherbiz/mram.pdf> retrieved on Jan. 25, 2002.
Lee, et al., “Separation of Contributions to Spin Valve Interlayer Exchange Coupling Field by Temperature Dependent Coupling Field Measurements” [online]46thMMM ConferenceSeattle, Washington 2001 pp. 1-16 [retrieved on Jan. 25, 2002] Retrieved from the Internet: <URL:www.andrew.cmu.edu/˜zlee/mmm.pdf>.
“Magnetoelectronics” [online] [retrieved on Jan. 25, 2002] Retrieved from the Internet: <URL: www.lpm.virginia.edu/research/PVD/Pubs/thesis7/chapter2.PDF> Chapter 2 pp. 7-34.
“Non-Volatile Memory (MRAM)”ANXXX[online] Honeywell <retrieved on Nov. 19, 2001> <URL: www.ssec.honeywell.com/avionics/h—gmr.pdf> pp. 1-4.
Fulkerson David E.
Lu Yong
Knobbe Martens Olson & Bear LLP
Le Thong Q.
Micro)n Technology, Inc.
LandOfFree
Bridge-type magnetic random access memory (MRAM) latch does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Bridge-type magnetic random access memory (MRAM) latch, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Bridge-type magnetic random access memory (MRAM) latch will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3554372