Bounded tub fermi threshold field effect transistor

Details Bounded tub fermi threshold field effect transistor Bounded tub fermi threshold field effect transistor

1993-04-21

1994-11-22

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257268, 257487, 257491, H01L 29784, H01L 2970, H01L 27105

Patent

active

053671864

ABSTRACT:
A Fermi-FET includes a Fermi-tub region at a semiconductor substrate surface, wherein the Fermi-tub depth is bounded between a maximum tub depth and a minimum tub depth. The Fermi-tub depth is sufficiently deep to completely deplete the Fermi-tub region by the substrate tub junction at the threshold voltage of the field effect transistor, and is also sufficiently shallow to produce a closed inversion injection barrier between the source region and the drain region below the threshold voltage of the Fermi-FET. High saturation current and low leakage current are thereby produced simultaneously. Source and drain injector regions and a gate sidewall spacer may also be provided.

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