Boundary isolation for microelectromechanical devices

Details Boundary isolation for microelectromechanical devices Boundary isolation for microelectromechanical devices

2002-05-03

2010-06-01

Monbleau, Davienne (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With reflector, opaque mask, or optical element integral...

C257S116000, C257SE23112, C438S050000

Reexamination Certificate

active

07728339

ABSTRACT:
A micromechanical structure is described. A region of semiconductor material has a first surface, a second surface opposite to the first surface, and a lateral surface that surrounds the region of semiconductor material. Insulative material covers the first surface and the lateral surface of the region of semiconductor material to provide electrical isolation to the region of semiconductor material by forming a boundary. To form the micromechanical structure, a trench is etched in a semiconductor substrate to surround a region of the semiconductor substrate. A surface of the semiconductor substrate and the trench are oxidized to form a top oxide and a lateral oxide region. A backside of the semiconductor substrate is etched to expose a backside of the region of the semiconductor substrate and a portion of the lateral oxide.

REFERENCES:
patent: 3493820 (1970-02-01), Rosvold
patent: 4104086 (1978-08-01), Bondur et al.
patent: 4509249 (1985-04-01), Goto et al.
patent: 4519128 (1985-05-01), Chesebro et al.
patent: 4571819 (1986-02-01), Rogers et al.
patent: 4670092 (1987-06-01), Motamedi
patent: 4688069 (1987-08-01), Joy et al.
patent: 4706374 (1987-11-01), Murakami
patent: 4784720 (1988-11-01), Douglas
patent: 4851080 (1989-07-01), Howe et al.
patent: 4855017 (1989-08-01), Douglas
patent: 4876217 (1989-10-01), Zdebel
patent: 4922756 (1990-05-01), Henrion
patent: 5068203 (1991-11-01), Logsdon et al.
patent: 5095752 (1992-03-01), Suzuki et al.
patent: 5121180 (1992-06-01), Beringhause et al.
patent: 5172262 (1992-12-01), Hornbeck
patent: 5198390 (1993-03-01), MacDonald et al.
patent: 5287082 (1994-02-01), Arney et al.
patent: 5316979 (1994-05-01), MacDonald et al.
patent: 5393375 (1995-02-01), MacDonald et al.
patent: 5397904 (1995-03-01), Arney et al.
patent: 5399415 (1995-03-01), Chen et al.
patent: 5426070 (1995-06-01), Shaw et al.
patent: 5449903 (1995-09-01), Arney et al.
patent: 5454906 (1995-10-01), Baker et al.
patent: 5463246 (1995-10-01), Matsunami
patent: 5485039 (1996-01-01), Fujita et al.
patent: 5501893 (1996-03-01), Laermer et al.
patent: 5506175 (1996-04-01), Zhang et al.
patent: 5536988 (1996-07-01), Zhang et al.
patent: 5563343 (1996-10-01), Shaw et al.
patent: 5583373 (1996-12-01), Ball et al.
patent: 5599744 (1997-02-01), Koh et al.
patent: 5608264 (1997-03-01), Gaul
patent: 5610335 (1997-03-01), Shaw et al.
patent: 5611888 (1997-03-01), Bosch et al.
patent: 5611940 (1997-03-01), Zettler
patent: 5628917 (1997-05-01), MacDonald et al.
patent: 5629790 (1997-05-01), Neukermans et al.
patent: 5637189 (1997-06-01), Peeters et al.
patent: 5646067 (1997-07-01), Gaul
patent: 5682062 (1997-10-01), Gaul
patent: 5719073 (1998-02-01), Shaw et al.
patent: 5726073 (1998-03-01), Zhang et al.
patent: 5759913 (1998-06-01), Fulford, Jr. et al.
patent: 5770465 (1998-06-01), MacDonald et al.
patent: 5814889 (1998-09-01), Gaul
patent: 5846849 (1998-12-01), Shaw et al.
patent: 5847454 (1998-12-01), Shaw et al.
patent: 5933746 (1999-08-01), Begley et al.
patent: 5973396 (1999-10-01), Farnworth
patent: 5998816 (1999-12-01), Nakaki et al.
patent: 5998906 (1999-12-01), Jerman et al.
patent: 6000280 (1999-12-01), Miller et al.
patent: 6020272 (2000-02-01), Fleming
patent: 6107109 (2000-08-01), Akram et al.
patent: 6121552 (2000-09-01), Brosnihan et al.
patent: 6128121 (2000-10-01), Choi et al.
patent: 6239473 (2001-05-01), Adams et al.
patent: 6295154 (2001-09-01), Laor et al.
patent: 6353492 (2002-03-01), McClelland et al.
patent: 6458615 (2002-10-01), Fedder et al.
patent: 6563106 (2003-05-01), Bowers et al.
patent: 2001/0044165 (2001-11-01), Lee et al.
patent: 2001/0051014 (2001-12-01), Behin et al.
patent: 2002/0127760 (2002-09-01), Yeh et al.
patent: 5-55401 (1993-03-01), None
patent: WO 94/18697 (1994-08-01), None
patent: WO 97/04283 (1997-02-01), None
patent: WO 99/36941 (1999-07-01), None
patent: WO 99/36948 (1999-07-01), None
Timothy J. Broshnihan, James M. Bustillo, Albert P. Pisano & Roger T. Howe, “Embedded Interconnect & Electrical Isolation for High-Aspect-Ratio, SOI Inertial Instruments,” Berkeley Sensor & Actuator Sensor, pp. 637-640, Transducers '97, 1997 International Conference on Solid-State Sensors and Actuators (Chicago, Jun. 16-19, 1997).
Lynn Michelle Roylance and James B. Angell, “A Batch-Fabricated Silicon Accelerometer,” IEEE Transactions on Electron Devices, vol. Ed-26, No. 12, pp. 1911-1917 (Dec. 1979).
Kevin A. Shaw, et al., “SCREAM I: A Single Mask, Single-Crystal Silicon, Reactive Ion Etching Process for Microelectromechanical Structures,” Sensors and Actuators A, 40 pp. 63-70 (1994).
Susanne C. Arney and Noel C. MacDonald, et al., “Formation of Submicron Silicon-On-Insulator Sructures by Lateral Oxidation of Substrate-Slicon Islands,” J. Vac. Sci. Technol. B vol. 6 No. 1, pp. 341-345, (Jan./Feb. 1988).
Chris Seung-Bok Lee, Sejin Han, Noel C. MacDonald, “Multiple Depth, Single Crystal Silicon MicroActuators for Large Displacement Fabricated by Deep Reactive Ion Etching,” Solid-State Sensor and Actuator Workshop, Hilton Head Island, SC, pp. 45-50 (Jun. 8-11, 1998).
Russell Y. Webb, Scott G. Adams, and Noel C. MacDonald, “Suspended Thermal Oxide Trench Isolation for SCS MEMS.” SPIE vol. 3519, Boston, MA, pp. 196-199 (Nov. 1998).
Seung Chris B. Lee, “Two-Depth, Single Crystal Silicon Microelectromechanical Systems.” A Dissertation Presented to the Faculty of the Graduate School of Cornell University in Partial Fulfillment of the Requirements for the Degree of Doctor of Philosophy, (Jan. 2000).
Noel C. MacDonald, “SCREAM MicroElectroMechanical Systems.” Microelectronic Engineering, 32, pp. 49-73 (1996)
Wolfgang Hofmann, Chris S. Lee, and Noel C. MacDonald, Monolithic Three-Dimensional Single-Crystal Silicon Microelectromechanical Systems, Sensors and Materials, vol. 10, No. 6, pp. 337-350 (1998).
Cornel Marxer and Nicolaas F. de Rooij, “Micro-Opto-Mechanical 2×2 Switch for Single-Mode Fibers Based on Plasma-Etched Silicon Mirror and Electrostatic Actuation,” Journal of Lightwave Technology, vol. 17, No. 1, pp. 2-6 (Jan. 1999).
Robert E. Mihailovich, Z. L. Zhang, K. A. Shaw, and Noel C. MacDonald, “Single-Crystal Silicon Torsional Resonators.” School of Electrical Engineering, Cornell University, Ithaca, NY 14853, pp. 184-188, IEEE (Feb. 1993).
M.T.A. Salf and N. C. MacDonald, “Planarity of Large MEMS,” Journal of Microelectromechanical Systems, 5, 79-97 (1996).
Chris S.B. Lee, Sejin Han, and Noel C. MacDonald, “Single Crystal Silicon (SCS) XY-Stage Fabricated by DRIE and IR alignment,” MEMS 2000: The Thirteenth Annual International Conference on Micro Electro Mechanical Systems, pp. 28-33 (Jan. 23-27, 2000).
Chris S.B. Lee, Russell Y. Webb, John M. Chong, and Noel C. MacDonald, “Single Crystal Silicon (SCS) MicroMirror Arrays using Deep Silicon Etching and IR Alignment,” MEMS 2000: The Thirteenth Annual International Conference on Micro Electro Mechanical Systems, pp. 441-448 (Jan. 23-27, 2000).
G. K. Fedder, S. Santhanam, M. L. Reed, S. C. Eagle, D. F. Guillou, M. S.-C. Lu, and L. R. Carley, “Laminated High-Aspect-Ratio Microstructures In a Conventional CMOS Process,”Proceedings of the IEEE Micro Electro Mechanical Systems Workshop, San Diego, CA, pp. 13-18 (Feb. 1996).

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