Boundaries with elevated deuterium levels

Details Boundaries with elevated deuterium levels Boundaries with elevated deuterium levels

2008-06-26

2010-11-30

Lee, Eugene (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S327000, C257SE29255, C438S197000, C438S217000, C438S289000

Reexamination Certificate

active

07842983

ABSTRACT:
A device is annealed in a deuterium atmosphere. Deuterium penetrates the device to a boundary, which is passivated by the deuterium.

REFERENCES:
patent: 2008/0067508 (2008-03-01), Endo et al.

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