Bottom source LDMOSFET structure and method

Details Bottom source LDMOSFET structure and method Bottom source LDMOSFET structure and method

2006-07-28

2009-06-30

Quach, Tuan N. (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S401000, C257S409000, C257SE29012

Reexamination Certificate

active

07554154

ABSTRACT:
This invention discloses bottom-source lateral diffusion MOS (BS-LDMOS) device. The device has a source region disposed laterally opposite a drain region near a top surface of a semiconductor substrate supporting a gate thereon between the source region and a drain region. The BS-LDMOS device further has a combined sinker-channel region disposed at a depth in the semiconductor substrate entirely below a body region disposed adjacent to the source region near the top surface wherein the combined sinker-channel region functioning as a buried source-body contact for electrically connecting the body region and the source region to a bottom of the substrate functioning as a source electrode. A drift region is disposed near the top surface under the gate and at a distance away from the source region and extending to and encompassing the drain region. The combined sinker-channel region extending below the drift region and the combined sinker-channel region that has a dopant-conductivity opposite to and compensating the drift region for reducing the source-drain capacitance.

REFERENCES:
patent: 5473180 (1995-12-01), Ludikhuize
patent: 6506648 (2003-01-01), Hebert et al.
patent: 6727127 (2004-04-01), Darmawan et al.
patent: 7061057 (2006-06-01), Babcock et al.

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