Bottom purge manifold for CVD tungsten process

Details Bottom purge manifold for CVD tungsten process Bottom purge manifold for CVD tungsten process

1994-04-13

1995-11-21

Bueker, Richard

Coating apparatus

Gas or vapor deposition

Work support

118715, 118725, C23C 1600

Patent

active

054682983

ABSTRACT:
A bottom purge manifold for the gas purge channel of a CVD semiconductor processing chamber provides an obstruction in the purge gas flow from a purge gas passage to the central portion of the processing chamber. The gas flow is restricted by a ring having generally equally spaced holes therethrough obstructing the purge channel opening and retained in the channel by spring loaded retaining flanges. A set of fan-shaped slots carry the purge gas from the openings and direct it towards the center portion of the processing chamber. This manifold produces a generally uniform flow from the gas purge manifold to improve the uniformity of vapor deposition on the wafer's surface.

REFERENCES:
patent: 5000113 (1991-03-01), Wang

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