Bottom-gated cylindrical-shaped thin film transistor having a pe

Details Bottom-gated cylindrical-shaped thin film transistor having a pe Bottom-gated cylindrical-shaped thin film transistor having a pe

1998-11-25

1999-12-07

Hardy, David B.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257900, 438158, 438595, H01L 2712

Patent

active

059988398

ABSTRACT:
A thin film transistor and a method for fabricating the same are disclosed, in which an offset region is affected or biased by a gate voltage to increase on-current, thereby improving on/off characteristic of a device. A first semiconductor layer is formed on a substrate, and insulating layer patterns are formed at both ends of the first semiconductor layer. A second semiconductor layer is formed on the first semiconductor layer and the insulating layer patterns. A gate insulating film is formed on the first and second semiconductor layers and the insulating layer patterns, and an active layer formed on the gate insulating film.

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