Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-01-16
2007-01-16
Le, Thao X. (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S149000, C438S153000
Reexamination Certificate
active
10945233
ABSTRACT:
In a bottom gate-type thin-film transistor manufacturing method, after ion doping, an ion stopper (55) is removed. The ion stopper (55) does not remain in the interlayer insulating film (8) lying immediately above the gate electrode. The thin-film transistor has such a structure that no ion stopper (55), and the interlayer insulating layer is in direct contact with at least the channel region of the semiconductor layer (4). The impurity concentration in the vicinity of the interface between the interlayer insulating film and the semiconductor layer4is 1018atoms/cc or less. This structure can prevent the back channel phenomenon and reduce variations in characteristic resulting from variations in manufacturing.
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Copy of Japanese Patent Laid-Open Publication No. Hei 9-263974 with English abstract.
Office Action for Korean Patent Application No. 10-2001-0068784 dated Feb. 23, 2004.
Morimoto Yoshihiro
Nakanishi Shiro
Oda Nobuhiko
Yamaji Toshifumi
Yoneda Kiyoshi
Cantor & Colburn LLP
Le Thao X.
Sanyo Electric Co,. Ltd.
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