Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2011-04-05
2011-04-05
Nguyen, Dao H (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S059000, C257S064000, C257S066000, C257S069000, C257S072000, C257SE21133, C257SE21134, C257SE29121, C438S149000, C438S151000, C438S166000
Reexamination Certificate
active
07919777
ABSTRACT:
A method of manufacturing a bottom gate thin film transistor (“TFT”) in which a polycrystalline channel region having a large grain size is formed relatively simply and easily. The method of manufacturing a bottom gate thin film transistor includes forming a bottom gate electrode on a substrate, forming a gate insulating layer on the substrate to cover the bottom gate electrode, forming an amorphous semiconductor layer, an N-type semiconductor layer and an electrode layer on the gate insulating layer sequentially, etching an electrode region and an N-type semiconductor layer region formed on the bottom gate electrode sequentially to expose an amorphous semiconductor layer region, melting the amorphous semiconductor layer region using a laser annealing method, and crystallizing the melted amorphous semiconductor layer region to form a laterally grown polycrystalline channel region.
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Cha Young-kwan
Lim Hyuck
Park Young-soo
Xianyu Wenxu
Cantor & Colburn LLP
Nguyen Dao H
Samsung Electronics Co,. Ltd.
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